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Facility for micro-nanostructuring of devices and sytems
National Institute for Research and Development in Microtechnologies - IMT Bucharest
Short link:
https://eeris.eu/
ERIF-2000-000V-0219
2055
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Facility for micro-nanostructuring of devices and sytems contain the equipments listed as follows: Equipment for: Micro Lithography and custom configurations; Nanolitographiy; Special deposition technique; Physical deposition method (from solid pahse); Dry etching; Chemistry and Mask shop. Laser lithography system - DWL 66 fs (Heidelberg Instruments Mikrotechnik, Germany), equipment that use laser direct writing process on resist for geometries transfer form computer to crom masks....
Adrian Miron
DINESCU
adrian.dinescu@imt.ro
Dr.
SCIENTIFIC TEAM
5
Dinescu ADRIAN
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Marius Andrei AVRAM
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Gabriela DRAGAN
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Damir Victor MLADENOVIC
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Catalin PARVULESCU
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Research Data Management Plan:
No information available
Access Policy to Research Infrastructure and Related Services:
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Research Services
Technological services for micro-nano devices and systems
SERVICE DESCRIPTION:
Main categories of servicies offered: technological services for micro-nano devices and systems: micro and nano-litography, 3D micro and nano-structuring in semiconductor materials; metalic layers for lift-off; plasma etching; custom masks design and realization.
SERVICE PERSONS:
Dinescu ADRIAN
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Masks fabrications
SERVICE DESCRIPTION:
DWL 66fs has 3 write heads of 2, 4 and 10 mm, which ensure a maximum resolution of 0,6 µm per stripe. Writing facility: on mask (with dimensions ranging between 2,5” and 6”) and on plates (with the diameter bigger or equal to 3”). It can be used for mask making or direct exposure on basically any flat material coated with photoresist. Main equipment used: Laser lithography system - DWL 66 fs. Direct writing laser, high resolution pattern generator.
SERVICE PERSONS:
Gabriela DRAGAN
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Damir Victor MLADENOVIC
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Isotropic silicon etching; Chopping gas method (Bosch process) for anisotropic silicon etching; Cryogenic method for anisotropic silicon etching;
SERVICE DESCRIPTION:
Isotropic silicon etching - allows dry etching of silicon for releasing suspended structures; Chopping gas method (Bosch process) for anisotropic silicon etching - allows deep etching of silicon (including via holes) with straight walls and high aspect ratio (up to 20:1); Cryogenic method for anisotropic silicon etching - allows deep and shallow etching of silicon with straight walls. Allows nanometer patterning; Main equipment used: Deep Reactive Ion Etching System (DRIE)/Oxford Instruments/2010
SERVICE PERSONS:
Marius Andrei AVRAM
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Dry etching of Si, SiO2, Si3N4; Polymer etching; Surface modification in plasma
SERVICE DESCRIPTION:
Dry etching of Si, SiO2, Si3N4 allows etching of nanometer features using photoresist or metal masking layers; Polymer etching allows removal or organic polymers by O2 plasma for cleaning or surface micromachining; Surface modification in plasma allows plasma treatment of surfaces in Ar, O2 or fluorine based plasma for different applications. Main equipment used: Reactive Ion Eatching (RIE) Plasma Etcher- Etchlab 200/Sentech Instruments/2009
SERVICE PERSONS:
Marius Andrei AVRAM
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Nano-scale patterning of various substrates, electron beam induced deposition and etching.
SERVICE DESCRIPTION:
Ultra high resolution electron beam lithography and nano engineering workstation Raith e_Line is a versatile electron beam lithography system having complied with the specific requirements of interdisciplinary research. Selected options for nanomanipu-lation, EBID and EBIE expand this system to a nano-engineering workstation. The state-of-the-art e_LiNE electron column matches perfectly with a number of key applications in: nanoelectroniccs, photonic crystals (PCs), Difractve Optic Elements (DOE), CNTs interconections, nanodevices and nanosystems for fundamental research and bio applications. Main used equipment: Electron Beam Lithography and nanoengineering workstation E-line/Raith GmbH/2007
SERVICE PERSONS:
Dinescu ADRIAN
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Wafer - Substrate Bonder System
SERVICE DESCRIPTION:
Bonding processes: Silicon to silicon Silicon to glass Pressure/heat assisted polymer bonding Adhesive/pressure/heat assisted bonding Main used equipment: Wafer Bonder System- SB6L/ Suss MicroTec, Germany /2012
SERVICE PERSONS:
Catalin PARVULESCU
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Research Equipment
Laser lithography system - DWL 66 fs/Heidelberg Instruments Mikrotechnik/2005
CATALOG NAME:
Pattern generator - DWL 66fs Laser Lithography System
DESCRIPTION:
The mask writing process with DWL 66fs is achieved through the help of a 405-nm Diode laser. DWL 66fs has 2 write heads of 2 and 10 mm, which ensure a maximum resolution of 0,6 µm respectively 3 µm. The mask file format can be in any of the following extensions: DXF, HPGL, Gerber, GDSII or CIF. Writing facility: on mask (with dimensions ranging between 2,5” and 6”) and on plates (with the diameter bigger or equal to 3”). Details: http://www.imt.ro/echipamente/dwl66fs.htm
PRODUCER:
Heidelberg Instruments Mikrotechnik, Germany
PRODUCTION YEAR:
2005
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Electron Beam Lithography and nanoengineering workstation E-line/Raith GmbH/2007
CATALOG NAME:
Electron Beam Lithography and nanoengineering workstation e-Line
DESCRIPTION:
Ultra high resolution electron beam lithography and nano engineering workstation Raith e_Line is a versatile electron beam lithography system having complied with the specific requirements of interdisciplinary research. Selected options for nanomanipu-lation, EBID and EBIE expand this system to a nano-engineering workstation. The state-of-the-art e_LiNE electron column matches perfectly with a number of key applications in: nanoelectroniccs, photonic crystals (PCs), Difractve Optic Elements (DOE), CNTs interconections, nanodevices and nanosystems for fundamental research and bio applications. Details: http://www.imt.ro/echipamente/nano_eng_workstation.htm
PRODUCER:
Raith GmbH, Germany
PRODUCTION YEAR:
2007
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Double Side Mask Aligner - MA6/BA6/ Suss MicroTec/
CATALOG NAME:
Double Side Mask Aligner - MA6/BA6
DESCRIPTION:
4”,5”, fragments >5x5 cm; Alignement range: X: ± 10 mm; Y: ± 5 mm ; Θ: ± 5º. Mechanical increment resolution: 0.1 µm. Top side alignment (TSA) – optical microscope “split field”, 0.5 µm. Bottom side alignment – high resolution LCD cameras, 0.1 µm. Enhanced Image Storage System (EISS). Exposure: contact, vacuum, proximity, flood. UV 365 nm, 1000 W (Hg). DEEP UV 249 nm 500 W (Hg / Xe). UV- NIL . Details: http://www.imt.ro/echipamente/dsma.htm
PRODUCER:
Suss MicroTec, Germany
PRODUCTION YEAR:
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Deep Reactive Ion Etching System (DRIE)/Oxford Instruments/2010
CATALOG NAME:
Deep Reactive Ion Etching System (DRIE)- Plasmalab System 100- ICP
DESCRIPTION:
plasma ething equipment for silicon, SiO2, Si3N4. Application: Etching: Bosch process for silicon Cryogenic process for silicon Bosch Process for SiC Single wafer processing. Can process 4” or smaller wafers, even small pieces. Process gases: SF6, C4F8, O2, Ar. General characteristics: Single 4” wafer processing 5.000 W maximum ICP power 300 W maximum substrate electrode power Temperature control for substrate electrode 2 ultrafast MFC close coupled to the ICP source (for smooth sidewalls) Process characteristics are: Si etch rate: 7.5 μm/min wafer non-uniformity: less than 3% wafer to wafer non-uniformity: less than 3% etching profile: 90o±1o vertical side-walls selectivity: 50:1 for PR mask or 200:1 for SiO2 mask aspect ratio: 20:1 http://www.imt.ro/echipamente/drie.html
PRODUCER:
Oxford Instruments, UK
PRODUCTION YEAR:
2010
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Reactive Ion Eatching (RIE) Plasma Etcher- Etchlab 200/Sentech Instruments/2009
CATALOG NAME:
Plasma Etcher- Etchlab 200
DESCRIPTION:
The Etchlab 220 is a single wafer Reactive Ion Etching (RIE) machine. The substrates (wafer, carrier, small pieces) are directly loaded onto the substrate electrode after venting and opening the reactor. The control of the process can be manual or automated, using the included Sentech software. The recipe is controlled directly through the software, the gas concentration can be easily set by the technician. Details: http://www.imt.ro/echipamente/rie.htm
PRODUCER:
SENTECH Instruments, Germany
PRODUCTION YEAR:
2009
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Wafer Bonder System- SB6L
CATALOG NAME:
Wafer Bonder System- SB6L
DESCRIPTION:
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-4 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers. PERFORMANCE: temperature control ± 30C; temperature uniformity ± 2% ; up to 8kN applied force ; process vacuum pressure down to 5*10-4 mbar
PRODUCER:
Suss MicroTec, Germany
PRODUCTION YEAR:
2012
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Phone:
+40-21-269.07.70, +40-21-269.07.74
Fax:
Erou Iancu Nicolae
,
126A
,
Voluntari
077190
,
Ilfov
Romania
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