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CENASIC - Research Centre for Integrated Systems Nanotechnologies and Carbon Based Nanomaterials
National Institute for Research and Development in Microtechnologies - IMT Bucharest
Short link:
https://eeris.eu/
ERIF-2000-000J-0780
2444
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CENASIC is a newly developed R&D infrastructure, in operation since Oct. 2015. The new research center at IMT Bucharest includes a 200sqm, class 1000/100 (ISO 6/5) clean room fully equipped, with a dedicated 42sqm chemistry zone of class 1000/100 (ISO 6/5). The center is organized in eight labs, out of which four are dedicated to material growth, processing and analysis: Processing of carbon based nanomaterials and nanostructures, Graphene technology, Thermal Processes, Thin layer spectrometry....
Adrian Miron
DINESCU
adrian.dinescu@imt.ro
PhD.
SCIENTIFIC TEAM
10
Marius Andrei AVRAM
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Anca Ionela ISTRATE
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Damir Victor MLADENOVIC
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Florin NASTASE
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Alexandru- Cosmin OBREJA
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Emil-Mihai PAVELESCU
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Antonio RADOI
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Titus SANDU
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Octavian Gabriel SIMIONESCU
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Silviu VULPE
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Micro and Nanotechnology Facilities
RI Domain of activity
Materials Synthesis or Testing Facilities
RI Domain of activity
Type Of RI:
Single sited RI
RI Life Cycle Status:
Active RI
Research Data Management Plan:
No information available
Access Policy to Research Infrastructure and Related Services:
No information available
Research Services
Epitaxial growth of nitride compounds on various substrates
SERVICE DESCRIPTION:
Epitaxial growth - molecular-beam epitaxy (MBE) - of (B)(Al)(In)GaN epilayers on various substrates, such as: Silicon, sapphire, SiC, etc. Growth of Graphene-like carbon. h-BN deposited on Silicon, SiC, sapphire. Main equipment used: Molecular Beam Epitaxy - COMPACT 21 DZ/Riber Inc./2015
SERVICE PERSONS:
Emil-Mihai PAVELESCU
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Growth of graphene
SERVICE DESCRIPTION:
Plasma Enhanced Chemical Vapor Deposition (PECVD) growth of graphene monolayers on Cu substrate. Main equipment used: Plasma Enhanced Chemical Vapor Deposition - Nanofab 1000/ Oxford Instruments Plasma Technology, Ltd./2015
SERVICE PERSONS:
Marius Andrei AVRAM
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Growth of carbon nanotubes
SERVICE DESCRIPTION:
Plasma Enhanced Chemical Vapor Deposition (PECVD) growth of carbon nanotubes on Si/SiO2 substrate. Main equipment used: Plasma Enhanced Chemical Vapor Deposition - Nanofab 1000/ Oxford Instruments Plasma Technology, Ltd./2015
SERVICE PERSONS:
Marius Andrei AVRAM
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Deposition of oxide ultra-thin films using ALD technology
SERVICE DESCRIPTION:
Atomic Layer Deposition (ALD) of ultra-thin films for advanced applications on nanometre or sub-nanometre scale, with conformal coating into high aspect ratio structures. Deposition materials: Al2O3. Main equipment used: Atomic Layer Deposition - OpAl / Oxford Instruments Plasma Technology, Ltd./2015
SERVICE PERSONS:
Florin NASTASE
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Thin layer deposition using RF magnetron sputtering
SERVICE DESCRIPTION:
RF magnetron sputtering deposition of dielectric and magnetic materials on different types of substrates. Main equipment used: RF Magnetron Sputtering - PlasmaLab System 400/ Oxford Instruments Plasma Technology, Ltd./2015
SERVICE PERSONS:
Marius Andrei AVRAM
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Wet oxidation (Hydrox)
SERVICE DESCRIPTION:
Growth of thermal silicon dioxide SiO2 using wet oxidation based on H2/O2 torch. Growth temperature: 900-1200 Celsius. SiO2 thickness: 50nm - 2m. 4 inch wafers. Very high uniformity over the wafer and from wafer to wafer. Main equipment used: Horizontal Multiprocess Furnace (4 tubes) - E 1200 HT/ Centrotherm Photovoltaics AG /2015
SERVICE PERSONS:
Alexandru- Cosmin OBREJA
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Boron diffusion; Phosphorous diffusion
SERVICE DESCRIPTION:
Boron and Phosphorous diffusion from solid (wafer) sources, for p-Si and n-Si doping. Process temperature: 900-1100 Celsius. 4 inch wafers. Superior resistance uniformity and excellent control of doping parameters. High load capacity (up to 30 wafers per run). Main equipment used: Horizontal Multiprocess Furnace (4 tubes) - E 1200 HT/ Centrotherm Photovoltaics AG /2015
SERVICE PERSONS:
Alexandru- Cosmin OBREJA
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Thermal annealing
SERVICE DESCRIPTION:
Thermal processing for various substrates. Process temperature: up to 1100 Celsius. 4 inch wafers. H2/N2 process gases. Up to 30 wafers per run. Main equipment used: Horizontal Multiprocess Furnace (4 tubes) - E 1200 HT/ Centrotherm Photovoltaics AG /2015
SERVICE PERSONS:
Alexandru- Cosmin OBREJA
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FT-IR investigations under vacuum conditions , FT-Raman
SERVICE DESCRIPTION:
FT-IR transmission: 25 000 – 50 cm-1 (under vacuum conditions). Attenuated Total Reflectance (ATR) FT-IR spectroscopy applied to monolayers up to relatively thick films, variable angle of incidence (30°-80°), polarized/non-polarized light. Grazing angle specular reflectance, grazing incidence angle measurements of thin film coatings on solid reflective surfaces. Main equipment used: FT-IR spectrometer, with FT-Raman module - VERTEX 80/80v with RAM II FT-Raman Module / Bruker Optics /2015
SERVICE PERSONS:
Antonio RADOI
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High performance computing: Numerical modeling/simulation for: Multiphysics; Quantum mechanics; Molecular dynamics
SERVICE DESCRIPTION:
Multiphysics numerical analysis using: COMSOL, COVENTORWARE, WavePlus300. Atomistic simulations: molecular dynamics (LAMMPS and PINY for Car-Parrinello molecular dynamics); ab initio based DFT electronic structure calculations with SIESTA, Quantum Espresso, Abinit, BerkeleyGW; semi-empirical based DFT with dftb+ package; quantum electron transport in nanostructures and molecules with TranSiesta and dftb+; quantum chemistry with QChem. Main equipment used: Server for High Performance Computing / SuperMicro, Intel Corporation, integrator PRO SYS SRL /2015
SERVICE PERSONS:
Titus SANDU
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Technological Services
Growth of nanocrystalline graphene (NCG) thin films
SERVICE DESCRIPTION:
High temperature deposition of nanocrystalline graphene thin films on Si/SiO2 wafers, with thickness ranging from 10 nm up to several micrometers. Deposition non-uniformity over 100 cm diameter <1%. Process temperature 900 oC. Main equipment used: Plasma Enhanced Chemical Vapor Deposition (PECVD) - Nanofab 1000/ Oxford Instruments Plasma Technology, Ltd./2015
SERVICE PERSONS:
Marius Andrei AVRAM
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Transfer of nanocrystalline graphene (NCG) thin films to PDMS substrates
SERVICE DESCRIPTION:
Transfer of NCG conductive thin films to PDMS flexible substrate. The process involves deposition of a sacrificial layer on the substrate wafer which enables the release of NCG directly to PDMS without intermediate transfer polymers. Main equipment used: Plasma Enhanced Chemical Vapor Deposition (PECVD) - Nanofab 1000/ Oxford Instruments Plasma Technology, Ltd./2015
SERVICE PERSONS:
Marius Andrei AVRAM
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Deposition of Al2O3 ultrathin films
SERVICE DESCRIPTION:
Conformal deposition of Al2O3 thin films ranging from 6 nm to 50 nm in thickness, using the Atomic Layer Deposition method. Main equipment used: OpAl / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Florin NASTASE
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Deposition of HfO2 ultrathin films
SERVICE DESCRIPTION:
Conformal deposition of HfO2 thin films ranging from 6 nm to 30 nm in thickness, using the Atomic Layer Deposition method. Main equipment used: OpAl / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Florin NASTASE
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Deposition of HfO2 doped with Al ultrathin films
SERVICE DESCRIPTION:
Conformal deposition of HfO2 doped with Al thin films ranging from 6 nm to 30 nm in thickness, using the Atomic Layer Deposition method. Main equipment used: OpAl / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Florin NASTASE
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Deposition of HfO2 doped with Zr ultrathin films
SERVICE DESCRIPTION:
Conformal deposition of HfO2 doped with Zr thin films ranging from 6 nm to 30 nm in thickness, using the Atomic Layer Deposition method. Main equipment used: OpAl / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Florin NASTASE
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Deposition of VO2 ultrathin films
SERVICE DESCRIPTION:
Conformal deposition of VO2 thin films ranging from 6 nm to 30 nm in thickness, using the Atomic Layer Deposition method. Main equipment used: OpAl / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Florin NASTASE
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Deposition of ZnO ultrathin films
SERVICE DESCRIPTION:
Conformal deposition of ZnO thin films ranging from 6 nm to 30 nm in thickness, using the Atomic Layer Deposition method. Main equipment used: OpAl / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Florin NASTASE
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Manufacturing of conductive graphene aerogels
SERVICE DESCRIPTION:
Manufacturing of conductive graphene aerogels with controlled shape using graphene oxide as precursor
SERVICE PERSONS:
Alexandru- Cosmin OBREJA
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Manufacturing of dielectric graphene aerogels
SERVICE DESCRIPTION:
Manufacturing of dielectric graphene aerogels with controlled shape using graphene oxide as precursor
SERVICE PERSONS:
Alexandru- Cosmin OBREJA
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Gray scale lithography
SERVICE DESCRIPTION:
Fabrication of various 3D patterns in photoresist by controlled exposure. Up to 32 layers, resolution 5 μm Main equipment: DWL 66fs Laser Lithography System / Heidelberg Instruments Mikrotechnik, Germany
SERVICE PERSONS:
Damir Victor MLADENOVIC
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Transfer of Nanocrystalline Graphite
SERVICE DESCRIPTION:
Transfer of Nanocrystalline Graphite to various polymeric substrates
SERVICE PERSONS:
Octavian Gabriel SIMIONESCU
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Growth of Single Layer Graphene on Cu substrate
SERVICE DESCRIPTION:
Growth of Single Layer Graphene grown on Cu substrate, area 2 cm x 2 cm, with full surface coverage and average graphene domain size of 50 μm Main Equipment used: Nanofab 1000 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Marius Andrei AVRAM
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Growth of multi wall Carbon Nanotubes
SERVICE DESCRIPTION:
Growth of MWCNT on Si wafers with average height of up to 1 μm, using Ni as growth catalyst. Main Equipment used: Nanofab 1000 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Octavian Gabriel SIMIONESCU
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Growth of vertically aligned graphene nanosheets
SERVICE DESCRIPTION:
Growth of vertically aligned and randomly orientated graphene nanosheets with average thickness of several nanometers and height of up to 1 μm, directly on Si/SiO2 substrate without catalytic metals. Main Equipment used: Nanofab 1000 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Marius Andrei AVRAM
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Deposition of Ni thin films
SERVICE DESCRIPTION:
Conformal deposition of Ni thin films up to several hundreds of nanometers in thickness, using the RF sputtering method. Main equipment used: PlasmaLab System 400 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Silviu VULPE
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Deposition of SiO2 thin films
SERVICE DESCRIPTION:
Conformal deposition of SiO2 thin films up to several hundreds of nanometers in thickness, using the RF sputtering method. Main equipment used: PlasmaLab System 400 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Silviu VULPE
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Deposition of Ti thin films
SERVICE DESCRIPTION:
Conformal deposition of Ti thin films up to several hundreds of nanometers in thickness, using the RF sputtering method. Main equipment used: PlasmaLab System 400 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Silviu VULPE
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Deposition of TiN thin films
SERVICE DESCRIPTION:
Conformal deposition of TiN thin films up to several hundreds of nanometers in thickness, using the reactive RF sputtering method. Main equipment used: PlasmaLab System 400 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Silviu VULPE
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Deposition of TiO2 thin films
SERVICE DESCRIPTION:
Conformal deposition of TiO2 thin films up to several hundreds of nanometers in thickness, using the reactive RF sputtering method. Main equipment used: PlasmaLab System 400 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Silviu VULPE
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Deposition of ZnO thin films
SERVICE DESCRIPTION:
Conformal deposition of ZnO thin films up to several hundreds of nanometers in thickness, using the RF sputtering method. Main equipment used: PlasmaLab System 400 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Silviu VULPE
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Deposition of ZnO doped with Al thin films
SERVICE DESCRIPTION:
Conformal deposition of ZnO doped with Al thin films up to several hundreds of nanometers in thickness, using the RF sputtering method. Main equipment used: PlasmaLab System 400 / Oxford Instruments Plasma Technology, Ltd./UK
SERVICE PERSONS:
Silviu VULPE
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Transfer of Single Layer Graphene from Cu foil to various substrates
SERVICE DESCRIPTION:
Transfer of Single Layer Graphene from Cu foil, area 2 cm x 2 cm, to silicon and plastic substrates Main Equipment used: Elecrochemical Delamination
SERVICE PERSONS:
Anca Ionela ISTRATE
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Research Equipment
Plasma Enhanced Chemical Vapor Deposition (PECVD) - Nanofab 1000/ Oxford Instruments Plasma Technology, Ltd./2015
CATALOG NAME:
Nanofab 1000
DESCRIPTION:
Paralel plate capacitive coupled plasma system, capable of working both in thermal CVD mode (no plasma), as well as in Plasma Enhanced CVD, for thin layers deposition. Especially configured for Graphene and Carbon Nanotubes growth.
PRODUCER:
Oxford Instruments Plasma Technology, Ltd./UK
PRODUCTION YEAR:
2015
COMMISSIONING DATE:
DATA SHEET:
Atomic Layer Deposition (ALD) - OpAl / Oxford Instruments Plasma Technology, Ltd./2015
CATALOG NAME:
Compact open-load system for Atomic Layer Deposition - OpAl
DESCRIPTION:
Uses alternative pulses of precursors in a vapour form, giving atomic-layer thickness control. Relatively low substrate temperatures, extremely high conformality/step coverage and low defect density, multilayer structures and nanolaminates.
PRODUCER:
Oxford Instruments Plasma Technology, Ltd./UK
PRODUCTION YEAR:
2015
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Download data sheet file (1048.7 kb)
RF Magnetron Sputtering - PlasmaLab System 400/ Oxford Instruments Plasma Technology, Ltd./2015
CATALOG NAME:
PlasmaLab System 400
DESCRIPTION:
RF magnetron sputtering system for dielectric and magnetic materials. Fitted with Argon, Nitrogen and Oxigen sources for deposition of pure materials, nitrides and oxides derived from various targets (sources).
PRODUCER:
Oxford Instruments Plasma Technology, Ltd./UK
PRODUCTION YEAR:
2015
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Horizontal Multiprocess Furnace (4 tubes) - E 1200 HT/ Centrotherm Photovoltaics AG /2015
CATALOG NAME:
Diffusion Furnace E 1200 HT 210-3 (4)
DESCRIPTION:
Four independent, closed tubes for: Boron diffusion and Phosphorous diffusion from solid sources, Thermal Annealing, Oxidation (hydrox torch system -H2+O2 gases). Independent runs of a single process or in parallel. Automating loading/unloading. Process temperatures up to 1200 Celsius; accuracy of 0.5 Celsius. PC-based recipes and process monitoring. DCE cleaning.
PRODUCER:
Centrotherm Photovoltaics AG /Germany
PRODUCTION YEAR:
2015
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
FT-IR spectrometer, with FT-Raman module - VERTEX 80/80v with RAM II FT-Raman Module / Bruker Optics /2015
CATALOG NAME:
VERTEX 80/80v FTIR spectrometers; RAM II FT-Raman Module
DESCRIPTION:
Large spectral range: 25 000 – 50 cm-1, DLATGS, DTGS(PE), and Si photodiode available as detectors, S/N: 60000:1 (peak-to-peak), spectral resolution: 0.06 cm-1; RAM II FT-Raman: RT-InGaAs detector and 1064 nm Nd:YAG laser.
PRODUCER:
Bruker Optics
PRODUCTION YEAR:
2015
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Server for High Performance Computing (HPC) / SuperMicro, Intel Corporation, integrator PRO SYS SRL /2015
CATALOG NAME:
Server for High Performance Computing (HPC)
DESCRIPTION:
HPC server based on Intel Xeon E5 v3 processors with 12 cores each. Performance - theoretical: Rpeak=7.95TFlops; practical: Rmax=6.5TFlops. 1 management node with 2 processors and 64 GB of RAM, 9 computing nodes with 2 processors each and 128 GB of DDR4 RAM (a total of 216 cores). 1 storage node with 15 TB storage space. All nodes are connected by Mellanox FDR Infiniband. 1 server with a “fat” node on Windows Operating System: 2x12 cores, 256 GB of RAM and 1 co-processor Intel Xeon Phi. Software installed: - Multiphysics packages: COMSOL for applications and modeling with FEM (finite element method); COVENTORWARE 2011 for simulation of MEMS and microfluidic components; WavePlus300 for acoustic simulations; MATLAB 2015. - Atomistic simulations: Materials Studio modelling; molecular dynamics (LAMMPS and PINY for Car-Parrinello molecular dynamics); ab initio based DFT electronic structure calculations with SIESTA, Quantum Espresso, Abinit, BerkeleyGW; semi-empirical based DFT with dftb+ code; quantum electron transport in nanostructures and molecules with TranSiesta and dftb+ code; quantum Chemistry Calculation with QChem.
PRODUCER:
SuperMicro, Intel Corporation, integrator PRO SYS SRL /2015
PRODUCTION YEAR:
2015
COMMISSIONING DATE:
PRICE RANGE (at the time of purchase)
DATA SHEET:
Phone:
+40-21-269.07.67
Fax:
+40-21-269.07.72
Erou Iancu Nicolae
,
126A
,
Voluntari
077190
,
Ilfov
Romania
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